Contamination on Chemically Etched Si (111) Surfaces

Selective adsorption of metallocenes on clean and chemically modified Si(111) surfaces

Layer Transfer from Chemically Etched 150 mm Porous Si Substrates

We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface conditioning for all Si layer transfer processes based on porous Si has been, up to now without exception, carried out by electrochemical etching. In contrast, our chemical stain etc...

Surface and Step Conductivities on Si(111) Surfaces.

Four-point measurements using a multitip scanning tunneling microscope are carried out in order to determine surface and step conductivities on Si(111) surfaces. In a first step, distance-dependent four-point measurements in the linear configuration are used in combination with an analytical three-layer model for charge transport to disentangle the 2D surface conductivity from nonsurface contri...

Fermi surfaces of surface states on Si „ 111 ... - Ag , Au

Metallic surface states on semiconducting substrates provide an opportunity to study low-dimensional electrons decoupled from the bulk. Angle resolved photoemission is used to determine the Fermi surface, group velocity, and effective mass for surface states on Si(111))3)-Ag, Si(111))3)-Au, and Si(111)A21 3A21-(Ag1Au). For Si(111))3)-Ag the Fermi surface consists of small electron pockets popul...

Control of polarized emission from selectively etched GaN/AlN quantum dot ensembles on Si(111)

Multiple layers of GaN/AlN quantum dot (QD) ensembles were grown by the Stranski-Krastanov method on Si(111) using molecular beam epitaxy. During the subsequent cooling from growth temperature, the thermal expansion coefficient mismatch between the Si substrate and GaN/AlN film containing the vertically stacked QDs leads to an additional biaxial tensile stress of 20–30 kbar in the III-nitride f...